Power Electronics Trainer PH-A-Q500-B-1 SA Brand

Features:
Comprehensive power Electronics trainer
Characteristics of the power electronics devices
Applications of the power devices.
Perform all essential power electronics circuit experiments
Students at engineering/technical institutes and R&D person in research labs
Integration control panel, to make operation easy and safe
4-point terminal, to make connection reliable
On board ellement box of component set, to make use easy.
Specification:
 Bread Board:
Consist of two Terminal Strips with 300
tie points and two Distribution Strips
with 50 tie points each, totaling to 400
tie points
 DC Power Supply: ±5V/200mA,
12V/200mA, 15V/200mA, +35V/100mA
 AC Power Supply: 18V-OV-18V/200mA,
15V-OV-15V/200mA
 Triggering Circuit: 5 gates signal output,
Frequency range: 40Hz to 900Hz
Variable,
Amplitude: 12V PWM control of G1, G2,
G3 and G4, Duty cycle control of “Gate”
signal is 0 to 100%
 Single Phase Rectifier:
Firing angle control 0°-180° variables
 Pulse Amplifier and Firing Circuit:
Four gates signal output with isolation
 SCR Assembly: 2P4M x 4, (600V, 2A)
 Power Devices: IGBT-G4BC205 x 4,
MOSFET-IRF540 x 4, UJT-2N2646, DIACDB3,TRIAC-BT136, PUT-2N6027, SCR-TYN-612 x 2
 Circuit Component: Diode-1N4007 x 8,
NE555 x 2, L.M-741 x 2
 Potentiometer: 4.7k2x 2, ΙΜΩ
 Load Resistance: (5W) 12012, 2702,
ΙΚΩ, 2.2ΚΩ
 Pulse Transformer: 1:1 x 2, 1:1:1
 Toggle Switch: SPDT
 Component Set in Element Box:
Resistor: (1/4W) 472×2, 1002×2,
2202×2, 5102×4, 8202×2, 1k2x2,
2.7k2x4. 5.1k0x2, 10k2x3, 22k2, 33k2,
47k2, (5W) 220, (2W) 1000, 2202
Capacitor: 0.01uF, 0.047uF, 0.1uF,
0.33uF, IuF/63Vx4, 2.2ul/50V
Inductor: 10mH, 68mHx2 Zener 9V
 Patch Cord:
20cm Red & Black 10 each, 40cm Red &
Black 5 each
 Input Voltage:
110-127VAC±10% 60Hz,220-240±10%
50Hz,
Switchable
Should perform the following
Experiments:
 To study the characteristics of SCR and
plot its V-I Characteristics.
 To study the Gate control
characteristics of SCR and it’s graph
 To study the characteristics of UGT and
calculate interbase resistance and
intrinsic standoff ratio
 To study the characteristics of MOSFET
 To study the characteristics of IGBT
 To study the characteristics of DIAC and
plot its V-1 characteristics curve
 To study the V-I characteristics of TRIAC
 To study the characteristics of PUT
 To study of class B commutation circuit
 To study of class C commutation circuit
 To study of class D commutation circuit
 To study of class F commutation circuit
 To study the Resistor Triggering circuit
 To study the Resistor-Capacitor
Triggering Circuit (Half wave)
 To study the Resistor-Capacitor
Triggering Circuit (Full wave).
 To study the triggering of SCR using UJT
 To study the Triggering of SCR using 555
IC.
 To study the Triggering of SCR using OpAmp 741 IC
 To study of the ramp and pedestal
triggering using anti-parallel SCR in AC
load
 To study of the UJT relaxation oscillator
 To study of the voltage commutated
chopper
 To study of the Bedford inverter
 To study of the single phase PWM
inverter using MOSFET To study of the
single phase PWM inverter using IGBT
 To study the half-wave-controlled
rectifier with resistive load
 To study the half wave-controlled
rectifier with RL. load
 To study the full-wave controlled
rectifier (mid-point configuration) with
resistive load
 To study the full-wave controlled
rectifier (mid point configuration) with
RI. load
 To study the fully controlled bridge
rectifier with resistive load
 To study the fully controlled bridge
rectifier with RL. load